Speaker:
Chenggang Zhou


Afilliation:
University of Georgia


Title:
"Numerical Simulation of Integer Quantum Hall Effect in Mesoscopic Samples"

Abstract

We numerically study the resistance fluctuations of mesoscopic samples, near transitions between  Quantum Hall plateaus recently discovered by E. Peled, et. al. [Phys. Rev. Lett. {\bf 90}, 246802 (2003); {\bf 90},236802 (2003); Phys. Rev. B new reference here (2004)]  The experiment is modeled by realistic first-principles simulations within non-interacting electron approximation This simulation uses a six-terminal geometry and sample sizes similar to those of real devices. The Hall and longitudinal resistances extracted from the Landauer formula exhibit all the observed experimental features.  We further propose a generalization of the Landauer-Buttiker model, based on the interplay between tunneling and chiral currents, to give unified explanations for the three regimes with distinct types of fluctuations observed, consistent with the scaling theory of integer quantum Hall effect. We identify the central regime at intermediate filling factor as the critical region where the localization length is comparable to or larger than the sample size.


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The Center for Simulational Physics Department of Physics and Astronomy The University of Georgia